 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| MOTOROLA The RF Line SEMICONDUCTOR TECHNICAL DATA Order this document by MRF840/D NPN Silicon RF Power Transistor . . . designed for 12.5 volt UHF large-signal, common-base amplifier applications in industrial and commercial FM equipment operating in the range of 806 - 960 MHz. * Specified 12.5 Volt, 870 MHz Characteristics Output Power = 10 Watts Power Gain = 6.0 dB Min Efficiency = 50% Min * Series Equivalent Large-Signal Characterization * Internally Matched Input for Broadband Operation * Tested for Load Mismatch Stress at All Phase Angles with 20:1 VSWR @ 15.5 Volt Supply and 50% RF Overdrive * Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal Migration * Silicon Nitride Passivated MRF840 10 W, 870 MHz RF POWER TRANSISTOR NPN SILICON CASE 319-07, STYLE 1 MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current -- Continuous Total Device Dissipation @ TC = 25C (1) Derate above 25C Storage Temperature Range Symbol VCEO VCBO VEBO IC PD Tstg Characteristic Thermal Resistance, Junction to Case (2) Symbol RJC Value 16 36 4.0 3.8 40 0.32 - 65 to +150 Unit Vdc Vdc Vdc Adc Watts W/C C THERMAL CHARACTERISTICS Max 3.1 Unit C/W ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (IC = 50 mAdc, IB = 0) Collector-Emitter Breakdown Voltage (IC = 50 mAdc, VBE = 0) Emitter-Base Breakdown Voltage (IE = 5.0 mAdc, IC = 0) Collector Cutoff Current (VCB = 15 Vdc, IE = 0) V(BR)CEO V(BR)CES V(BR)EBO ICBO 16 36 4.0 -- -- -- -- -- -- -- -- 2.0 Vdc Vdc Vdc mAdc NOTES: (continued) 1. This device is designed for RF operation. The total device dissipation rating applies only when the device is operated as an RF amplifier. 2. Thermal Resistance is determined under specified RF operating conditions by infrared measurement techniques. REV 6 (c)MOTOROLA RF DEVICE DATA Motorola, Inc. 1994 MRF840 1 ELECTRICAL CHARACTERISTICS -- continued (TC = 25C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit ON CHARACTERISTICS DC Current Gain (IC = 1.0 Adc, VCE = 5.0 Vdc) hFE 10 -- -- -- DYNAMIC CHARACTERISTICS Output Capacitance (VCB = 12.5 Vdc, IE = 0, f = 1.0 MHz) Cob -- 24 35 pF FUNCTIONAL TESTS Common-Base Amplifier Power Gain (Pout = 10 W, VCC = 12.5 Vdc, f = 870 MHz) Collector Efficiency (Pout = 10 W, VCC = 12.5 Vdc, f = 870 MHz) Load Mismatch Stress (VCC = 15.5 Vdc, Pin = 3.0 W, (3) f = 870 MHz, VSWR = 20:1, all phase angles) GPE -- No Degradation in Output Power 6.0 50 7.0 55 -- -- dB % NOTE: 3. Pin = 150% of the typical input power requirement for 10 W output power @ 12.5 Vdc. L1 C4 SHORTING PLUG SOCKET C9 SOCKET L6 L2 C2 C3 L3 L5 C10 L4 C11 C5 D.U.T. C7 RF INPUT C1 C12 T1 T2 T3 C6 C8 L7 C1, C12 -- 50 pF, 100 Mil Chip Capacitor C2, C11 -- 15 F, 20 V Tantalum C3, C10 -- 1000 pF, 350 V UNELCO C4, C9 -- 91 pF Mini-Underwood C5 -- 15 pF C6 -- 15 pF C7 -- 15 pF C8 -- 15 pF L1, L6 -- 11 Turns 20 AWG Around 10 1/2 W Resistor L2, L5 -- Ferrite Bead L3, L4 -- 4 Turn 20 AWG 0.2 I.D. T1, T4 -- ZO = 50 T2 -- ZO = 30 = /4 @ 838 MHz T3 -- ZO = 13.5 = /4 @ 838 MHz L7 -- 18 AWG Wire Loop 0.25 0.5 Figure 1. 870 MHz Test Circuit MRF840 2 MOTOROLA RF DEVICE DATA CCC CCC CCC CCC T4 CCCCC CCCCC CCCCC CCCCC CCCC CCCC CCCC CCCC CCC CCC CCC CCC RF OUTPUT 14 Pout , OUTPUT POWER (WATTS) Pout , OUTPUT POWER (WATTS) 12 10 8 6 4 2 0 0 0.5 1 1.5 2 f = 870 MHz 2.5 3 3.5 14 13 12 11 10 9 8 7 6 5 4 800 820 VCC = 12.5 V 840 860 880 900 1W 2W Pin = 3 W Pin, INPUT POWER (WATTS) f, FREQUENCY (MHz) Figure 2. Output Power versus Input Power Figure 3. Output Power versus Frequency 20 18 Pout , OUTPUT POWER (WATTS) 16 14 12 10 8 6 4 2 0 6 7 8 9 10 11 f = 870 MHz 12 13 14 15 16 1W Pin = 3 W 2W VCC, SUPPLY VOLTAGE (Vdc) Figure 4. Output Power versus Supply Voltage 2 0 1 2 4 Pout = 10 W, VCC = 12.5 Vdc f MHz 6 Zin Ohms 2.0 + j6.1 2.0 + j6.2 2.0 + j6.4 2.0 + j6.8 ZOL* Ohms 3.3 - j0.4 3.0 - j0.3 2.5 + j0.0 2.0 + j0.3 ZOL* 870 836 2 3 900 f = 800 MHz 870 Zin 836 f = 800 MHz4 800 836 870 900 6 900 ZOL* = Conjugate of the optimum load impedance ZOL* = into which the device output operates at a ZOL* = given output power, voltage and frequency. Figure 5. Series Equivalent Input/Output Impedance MOTOROLA RF DEVICE DATA MRF840 3 PACKAGE DIMENSIONS IDENTIFICATION NOTCH 6 -AL 5 4 Q 2 PL 0.15 (0.006) M TA M N M NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. -N1 2 3 K F D 2 PL 0.38 (0.015) M B J H C E -TSEATING PLANE TA M M N M M 0.38 (0.015) TA N M DIM A B C D E F H J K L N Q STYLE 1: PIN 1. 2. 3. 4. 5. 6. INCHES MIN MAX 0.965 0.985 0.355 0.375 0.230 0.260 0.115 0.125 0.102 0.114 0.075 0.085 0.160 0.170 0.004 0.006 0.090 0.110 0.725 BSC 0.225 0.241 0.125 0.135 MILLIMETER MIN MAX 24.52 25.01 9.02 9.52 5.85 6.60 2.93 3.17 2.59 2.90 1.91 2.15 4.07 4.31 0.11 0.15 2.29 2.79 18.42 BSC 5.72 6.12 3.18 3.42 BASE (COMMON) EMITTER (INPUT) BASE (COMMON) BASE (COMMON) COLLECTOR (OUTPUT) BASE (COMMON) CASE 319-07 ISSUE M Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters can and do vary in different applications. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. Literature Distribution Centers: USA: Motorola Literature Distribution; P.O. Box 20912; Phoenix, Arizona 85036. EUROPE: Motorola Ltd.; European Literature Centre; 88 Tanners Drive, Blakelands, Milton Keynes, MK14 5BP, England. JAPAN: Nippon Motorola Ltd.; 4-32-1, Nishi-Gotanda, Shinagawa-ku, Tokyo 141, Japan. ASIA PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Center, No. 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong. MRF840 4 *MRF840/D* MRF840/D MOTOROLA RF DEVICE DATA |
Price & Availability of MRF840
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |